To enhance lasers’ power and improve their performance, a model wasapplied for the waveguide design of 400 nm InGaN/InGaN semiconductor laser, whichis much easier to implement. The conventional and new laser structures weretheoretically investigated using simulation software PICS3D, which self-consistentlycombines 3D simulation of carrier transport, self-heating, and opt...

The optical properties of InGaN/GaN laser diode based on quaternary alloys stopper and superlattice layers are numerically studied using ISE TCAD (Integrated System Engineering) simulation program. Improvements in laser optical performance have been achieved using quaternary alloy as superlattice layers in InGaN/GaN laser diodes. Lower threshold current of 18 mA and higher output power and slop...

Related Articles In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers Appl. Phys. Lett. 99, 201109 (2011) Near-field dynamics of broad area diode laser at very high pump levels AIP Advances 1, 042148 (2011) Photonic bandstructure engineering of THz quantum-cascade lasers Appl. Phys. Lett. 99, 201103 (2011) Simulation of quantum cascade lasers J. Appl. Phys. 110, 093109 ...

Related Articles In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers Appl. Phys. Lett. 99, 201109 (2011) Near-field dynamics of broad area diode laser at very high pump levels AIP Advances 1, 042148 (2011) Photonic bandstructure engineering of THz quantum-cascade lasers Appl. Phys. Lett. 99, 201103 (2011) Simulation of quantum cascade lasers J. Appl. Phys. 110, 093109 ...

A very compact explosive vapor sensor is demonstrated based on a distributed feedback polymer laser pumped by a commercial InGaN light-emitting diode. The laser shows a two-stage turn on of the laser emission, for pulsed drive currents above 15.7 A. The 'double-threshold' phenomenon is attributed to the slow rise of the ∼30 ns duration LED pump pulses. The laser emits a 533 nm pulsed output bea...

Reconfigurable photonic technology combining multiple functionalities in a single gain-chip is crucial light-based platform for enabling hybrid applications. Here, we report on achieving widely tunable and reconfigurable blue laser source using single-port gain medium based an InGaN/GaN superluminescent diode (SLD). As compared to laser-diode emitters solely stimulated emission from used as the...

Ultra-high luminance lamps emitting white light with a well-scattered blue spectrum from InGaN/GaN laser diodes and a phosphor-converted yellow spectrum show speckle contrast values as low as LED. Spectral behavior of the laser diodes is analyzed to find the reason why such low values are obtained. As a result, the PWM-driven, multilongitudinal mode with dynamically broadened line-width is foun...

An edge-emitting laser diode is described in which the epitaxial upper cladding layer is replaced with a metal contact selected for its optical as well as electrical properties. The structure is demonstrated with an In0.1Ga0.9N multiple-quantum-well laser diode operating at 412 nm with silver rather than the typical p-type AlGaN for the upper cladding. Silver is effective as a cladding layer be...

Background and Aim: Diode laser is a great choice for soft tissue surgery. The diode laser is partially absorbed by hard dental tissues, making it safe for soft tissue surgery. This study aimed to compare the tissue thermal changes induced by three types of diode lasers at 810, 940, and 980nm wavelengths. Materials and Methods: In this in-vitro experimental study, using a diode laser device (c...